? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c27a i dm t c = 25 c, pulse width limited by t jm 108 a i ar t c = 25 c27a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 800 v v gs(th) v ds = v gs , i d = 4ma 2.0 4.5 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 320 m ? note 1 ds98722a (12/02) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain v dss = 800 v i d25 =27a r ds(on) = 320 m ? ? ? ? ? t rr 250 ns s g d (tab) to-264 aa (ixfk) hiperfet tm power mosfets q-class single mosfet die n-channel enhancement mode avalanche rated, low qg, high dv/dt, low t rr features z ixys advanced low q g process z low gate charge and capacitances - easier to drive - faster switching z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) rated z molding epoxies meet ul 94 v-0 flammability classification applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z temperature and lighting controls advantages z plus 247 tm package for clip or spring mounting z space savings z high power density ixfk 27n80q ixfx 27n80q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 20 27 s c iss 7600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 750 pf c rss 120 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 28 ns t d(off) r g = 1 ? (external), 50 n s t f 13 ns q g(on) 170 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 47 nc q gd 65 nc r thjc 0.26 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 27 a i sm repetitive; 108 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.3 c i rm 8a i f = i s ,-di/dt = 100 a/ s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixfk 27n80q ixfx 27n80q
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